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SI7971DP New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.018 @ VGS = - 4.5 V - 12 0.022 @ VGS = - 2.5 V 0.029 @ VGS = - 1.8 V FEATURES ID (A) - 11.7 - 10.6 - 3.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAK SO-8 S1 6.15 mm S1 S2 1 2 5.15 mm G1 S2 3 4 D1 G1 G2 G2 8 7 D1 D2 6 5 D2 Ordering Information: SI7971DP-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 2.9 3.5 2.2 - 55 to 150 - 9.4 - 30 - 1.2 1.4 0.9 W _C - 6.0 A Symbol VDS VGS 10 secs Steady State - 12 "8 Unit V - 11.7 - 7.5 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72357 S-31610--Rev. A, 11-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 60 3 Maximum 35 85 3.7 Unit _C/W C/W 1 SI7971DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 450 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 11.7 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 10.6 A VGS = - 1.8 V, ID = - 3.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 11.7 A IS = - 2.9 A, VGS = 0 V - 30 0.014 0.018 0.023 37 - 0.7 - 1.2 0.018 0.022 0.029 S V W - 0.40 - 1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 11.7 A 39 6.5 10 9.4 38 60 280 210 120 60 90 420 320 180 ns W 60 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 1.5 V 12 TC = 125_C 25_C - 55_C 6 1V 0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72357 S-31610--Rev. A, 11-Aug-03 2 SI7971DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) - On-Resistance ( W ) 5000 Vishay Siliconix Capacitance 0.05 C - Capacitance (pF) 4000 Ciss 3000 0.04 0.03 VGS = 1.8 V VGS = 2.5 V 2000 Coss 0.02 VGS = 4.5 V 0.01 1000 Crss 0.00 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 11.7 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 11.7 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 20 30 40 50 1.2 2 1.0 1 0.8 0 0 10 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.06 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.05 0.04 ID = 11.7 A 0.03 ID = 3.5 A 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72357 S-31610--Rev. A, 11-Aug-03 www.vishay.com 3 SI7971DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 Single Pulse Power, Junction-to-Ambient 0.3 ID = 450 mA V GS(th) Variance (V) 0.2 Power (W) 24 18 0.1 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse P(t) = 10 dc 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72357 S-31610--Rev. A, 11-Aug-03 SI7971DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72357 S-31610--Rev. A, 11-Aug-03 www.vishay.com 5 |
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